PART |
Description |
Maker |
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
TLP705 |
Plasma Display Panel. Industrial Inverter IGBT/Power MOS FET Gate Drive
|
Toshiba Semiconductor
|
IP2030 |
30V MCT/IGBT Gate Driver(MOS???纭??浣??/缁????????浣???ㄩ┍?ㄥ?)
|
Intersil Corporation
|
APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
APT40GP90J |
MOSFET POWER MOS 7 IGBT 68 A, 900 V, N-CHANNEL IGBT ISOTOP-4
|
ADPOW[Advanced Power Technology] Advanced Power Electronics, Corp.
|
APT5020BLC APT5020SLC |
POWER MOS VI 500V 26A 0.200 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
APT10025JLC |
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs POWER MOS VI 1000V 34A 0.250 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package 430V Low-Vceon Discrete IGBT in a D2-Pak package 430V Low-Vceon Discrete IGBT in a TO-220AB package IGBT with on-chip Gate-Emitter and Gate-Collector clamps INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
APT35GP120BG |
POWER MOS 7? IGBT
|
Microsemi Corporation
|
APT40GP90B2DQ2 APT40GP90B2DQ2G |
POWER MOS 7 IGBT
|
Advanced Power Technology
|